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{{Spark-Core-Materiel-NAV}}
 
{{Spark-Core-Materiel-NAV}}
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== Spécifications techniques ==
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 +
=== Valeurs maximales absolues ===
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{| class="wikitable" border="1"
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| align="center" style="background:#f0f0f0;"|'''Parameter'''
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| align="center" style="background:#f0f0f0;"|'''Symbol'''
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| align="center" style="background:#f0f0f0;"|'''Min'''
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| align="center" style="background:#f0f0f0;"|'''Typ'''
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| align="center" style="background:#f0f0f0;"|'''Max'''
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| align="center" style="background:#f0f0f0;"|'''Unit'''
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|-
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| Supply Input Voltage ||VIN-MAX ||||||+6.5 ||V
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|-
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| Supply Output Current ||IIN-MAX-L ||||||1 ||A
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|-
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| Supply Output Current ||I3V3-MAX-L ||||||100 ||mA
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|-
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| Storage Temperature ||Tstg ||-40 ||||+85 ||°C
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|-
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| Enable Voltage ||VEN ||||||VIN+0.6 ||V
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|-
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| ESD Susceptibility HBM (Human Body Mode) ||VESD ||||||2 ||kV
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|}
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=== Conditions de fonctionnement recommandées ===
 +
 +
{| class="wikitable" border="1"
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| align="center" style="background:#f0f0f0;"|'''Parameter'''
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| align="center" style="background:#f0f0f0;"|'''Symbol'''
 +
| align="center" style="background:#f0f0f0;"|'''Min'''
 +
| align="center" style="background:#f0f0f0;"|'''Typ'''
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| align="center" style="background:#f0f0f0;"|'''Max'''
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| align="center" style="background:#f0f0f0;"|'''Unit'''
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|-
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| Supply Input Voltage ||VIN ||+3.6 ||||+5.5 ||V
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|-
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| Supply Input Voltage ||V3V3 ||+3.0 ||+3.3 ||+3.6 ||V
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|-
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| Supply Output Voltage ||VIN ||||+4.8 ||||V
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|-
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| Supply Output Voltage ||V3V3 ||||+3.3 ||||V
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|-
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| Supply Input Voltage ||VVBAT ||+1.65 ||||+3.6 ||V
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|-
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| Supply Input Current (VBAT) ||IVBAT ||||||19 ||uA
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|-
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| Operating Current (Wi-Fi on) ||IIN avg ||||80 ||100 ||mA
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|-
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| Operating Current (Wi-Fi on) ||IIN pk ||235[1] ||||430[1] ||mA
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|-
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| Operating Current (Wi-Fi on, w/powersave) ||IIN avg ||||18 ||100[2] ||mA
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|-
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| Operating Current (Wi-Fi off) ||IIN avg ||||30 ||40 ||mA
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|-
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| Sleep Current (5V @ VIN) ||IQs ||||1 ||2 ||mA
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|-
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| Deep Sleep Current (5V @ VIN) ||IQds ||||80 ||100 ||uA
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|-
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| Operating Temperature ||Top ||-20 ||||+60 ||°C
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|-
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| Humidity Range Non condensing, relative humidity ||||||||95 ||%
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|}
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{{underline|Notes:}}
 +
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[1] These numbers represent the extreme range of short peak current bursts when transmitting and receiving in 802.11b/g/n modes at different power levels. Average TX current consumption in will be 80-100mA.
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[2] These are very short average current bursts when transmitting and receiving. On average if minimizing frequency of TX/RX events, current consumption in powersave mode will be 18mA
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=== Spécifications WiFi ===
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{| class="wikitable" border="1"
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| align="center" style="background:#f0f0f0;"|'''Feature'''
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| align="center" style="background:#f0f0f0;"|'''Description'''
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|-
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| WLAN Standards ||IEEE 802 11b/g/n
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|-
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| Antenna Port ||Single Antenna
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|-
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| Frequency Band ||2.400 GHz – 2.484 GHz
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|-
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| Sub Channels ||1 ~ 14
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|-
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| Modulation ||DSSS, CCK, OFDM, BPSK, QPSK,16QAM, 64QAM
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|}
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{|class="wikitable" border="1"
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| align="center" style="background:#f0f0f0;"|'''PØ module Wi-Fi output power'''
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| align="center" style="background:#f0f0f0;"|''''''
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| align="center" style="background:#f0f0f0;"|'''Typ.'''
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| align="center" style="background:#f0f0f0;"|'''Tol.'''
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| align="center" style="background:#f0f0f0;"|'''Unit'''
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|-
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| RF Average Output Power, 802.11b CCK Mode ||1M ||16.5 ||+/- 1.5 ||dBm
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|-
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| ||11M ||16.5 ||+/- 1.5 ||dBm
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|-
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| RF Average Output Power, 802.11g OFDM Mode ||6M ||15 ||+/- 1.5 ||dBm
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|-
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| ||54M ||13 ||+/- 1.5 ||dBm
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|-
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| RF Average Output Power, 802.11n OFDM Mode ||MCS0 ||14.5 ||+/- 1.5 ||dBm
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|-
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| ||MCS7 ||12 ||+/- 1.5 ||dBm
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|}
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=== Caractéristiques I/O ===
 +
 +
These specifications are based on the STM32F205RG datasheet, with reference to Photon pin nomenclature.
 +
 +
{| class="wikitable" border="1"
 +
| align="center" style="background:#f0f0f0;"|'''Parameter'''
 +
| align="center" style="background:#f0f0f0;"|'''Symbol'''
 +
| align="center" style="background:#f0f0f0;"|'''Conditions'''
 +
| align="center" style="background:#f0f0f0;"|'''Min'''
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| align="center" style="background:#f0f0f0;"|'''Typ'''
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| align="center" style="background:#f0f0f0;"|'''Max'''
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| align="center" style="background:#f0f0f0;"|'''Unit'''
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|-
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| Standard I/O input low level voltage ||VIL ||||-0.3 ||||0.28*(V3V3-2)+0.8 ||V
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|-
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| I/O FT[1] input low level voltage ||VIL ||||-0.3 ||||0.32*(V3V3-2)+0.75 ||V
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|-
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| Standard I/O input high level voltage ||VIH ||||0.41*(V3V3-2)+1.3 ||||V3V3+0.3 ||V
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|-
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| I/O FT[1] input high level voltage ||VIH ||V3V3 > 2V ||0.42*(V3V3-2)+1 ||||5.5 ||V
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|-
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| ||VIH ||V3V3 ≤ 2V ||0.42*(V3V3-2)+1 ||||5.2 ||V
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|-
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| Standard I/O Schmitt trigger voltage hysteresis[2] ||Vhys ||||200 ||||||mV
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|-
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| I/O FT Schmitt trigger voltage hysteresis[2] ||Vhys ||||5% V3V3[3] ||||||mV
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|-
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| Input leakage current[4] ||Ilkg ||GND ≤ Vio ≤ V3V3 GPIOs ||||||±1 ||µA
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|-
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| Input leakage current[4] ||Ilkg ||RPU ||Vio = 5V, I/O FT ||||3 ||µA
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|-
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| Weak pull-up equivalent resistor[5] ||RPU ||Vio = GND ||30 ||40 ||50 ||k Ω
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|-
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| Weak pull-down equivalent resistor[5] ||RPD ||Vio = V3V3 ||30 ||40 ||50 ||k Ω
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|-
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| I/O pin capacitance ||CIO ||||||5 ||||pF
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|}
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{{underline|Notes:}}
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[1] FT = Five-volt tolerant. In order to sustain a voltage higher than V3V3+0.3 the internal pull-up/pull-down resistors must be disabled.
 +
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[2] Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production.
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[3] With a minimum of 100mV.
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[4] Leakage could be higher than max. if negative current is injected on adjacent pins.
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[5] Pull-up and pull-down resistors are designed with a true resistance in series with switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimum (~10% order).
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{{Spark-Photon-Materiel-TRAILER}}
 
{{Spark-Photon-Materiel-TRAILER}}

Version du 2 juillet 2015 à 20:57


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Spécifications techniques

Valeurs maximales absolues

Parameter Symbol Min Typ Max Unit
Supply Input Voltage VIN-MAX +6.5 V
Supply Output Current IIN-MAX-L 1 A
Supply Output Current I3V3-MAX-L 100 mA
Storage Temperature Tstg -40 +85 °C
Enable Voltage VEN VIN+0.6 V
ESD Susceptibility HBM (Human Body Mode) VESD 2 kV

Conditions de fonctionnement recommandées

Parameter Symbol Min Typ Max Unit
Supply Input Voltage VIN +3.6 +5.5 V
Supply Input Voltage V3V3 +3.0 +3.3 +3.6 V
Supply Output Voltage VIN +4.8 V
Supply Output Voltage V3V3 +3.3 V
Supply Input Voltage VVBAT +1.65 +3.6 V
Supply Input Current (VBAT) IVBAT 19 uA
Operating Current (Wi-Fi on) IIN avg 80 100 mA
Operating Current (Wi-Fi on) IIN pk 235[1] 430[1] mA
Operating Current (Wi-Fi on, w/powersave) IIN avg 18 100[2] mA
Operating Current (Wi-Fi off) IIN avg 30 40 mA
Sleep Current (5V @ VIN) IQs 1 2 mA
Deep Sleep Current (5V @ VIN) IQds 80 100 uA
Operating Temperature Top -20 +60 °C
Humidity Range Non condensing, relative humidity 95 %

Notes:

[1] These numbers represent the extreme range of short peak current bursts when transmitting and receiving in 802.11b/g/n modes at different power levels. Average TX current consumption in will be 80-100mA.

[2] These are very short average current bursts when transmitting and receiving. On average if minimizing frequency of TX/RX events, current consumption in powersave mode will be 18mA

Spécifications WiFi

Feature Description
WLAN Standards IEEE 802 11b/g/n
Antenna Port Single Antenna
Frequency Band 2.400 GHz – 2.484 GHz
Sub Channels 1 ~ 14
Modulation DSSS, CCK, OFDM, BPSK, QPSK,16QAM, 64QAM
PØ module Wi-Fi output power ' Typ. Tol. Unit
RF Average Output Power, 802.11b CCK Mode 1M 16.5 +/- 1.5 dBm
11M 16.5 +/- 1.5 dBm
RF Average Output Power, 802.11g OFDM Mode 6M 15 +/- 1.5 dBm
54M 13 +/- 1.5 dBm
RF Average Output Power, 802.11n OFDM Mode MCS0 14.5 +/- 1.5 dBm
MCS7 12 +/- 1.5 dBm

Caractéristiques I/O

These specifications are based on the STM32F205RG datasheet, with reference to Photon pin nomenclature.

Parameter Symbol Conditions Min Typ Max Unit
Standard I/O input low level voltage VIL -0.3 0.28*(V3V3-2)+0.8 V
I/O FT[1] input low level voltage VIL -0.3 0.32*(V3V3-2)+0.75 V
Standard I/O input high level voltage VIH 0.41*(V3V3-2)+1.3 V3V3+0.3 V
I/O FT[1] input high level voltage VIH V3V3 > 2V 0.42*(V3V3-2)+1 5.5 V
VIH V3V3 ≤ 2V 0.42*(V3V3-2)+1 5.2 V
Standard I/O Schmitt trigger voltage hysteresis[2] Vhys 200 mV
I/O FT Schmitt trigger voltage hysteresis[2] Vhys 5% V3V3[3] mV
Input leakage current[4] Ilkg GND ≤ Vio ≤ V3V3 GPIOs ±1 µA
Input leakage current[4] Ilkg RPU Vio = 5V, I/O FT 3 µA
Weak pull-up equivalent resistor[5] RPU Vio = GND 30 40 50 k Ω
Weak pull-down equivalent resistor[5] RPD Vio = V3V3 30 40 50 k Ω
I/O pin capacitance CIO 5 pF

Notes:

[1] FT = Five-volt tolerant. In order to sustain a voltage higher than V3V3+0.3 the internal pull-up/pull-down resistors must be disabled.

[2] Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production.

[3] With a minimum of 100mV.

[4] Leakage could be higher than max. if negative current is injected on adjacent pins.

[5] Pull-up and pull-down resistors are designed with a true resistance in series with switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimum (~10% order).


Source: Particle Photon Hardware créé par Particle.IO.

Traduction réalisée par Meurisse D pour MCHobby.be - Translated by Meurisse D. for MCHobby.be

Traduit avec l'autorisation de Particle.IO - Translated with the permission from Particle.IO - Particle.IO

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